Semiconductor absolute pressure transducer assembly and method

Details Semiconductor absolute pressure transducer assembly and method Semiconductor absolute pressure transducer assembly and method

1979-09-19

1981-09-22

Albritton, C. L.

Electrical resistors

Strain gauge type

Fluid- or gas pressure-actuated

73727, 357 26, G01L 122

Patent

active

042912938

ABSTRACT:
A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly. The covering member of borosilicate glass having a circular well is mounted and bonded onto the silicon diaphragm assembly in contact with the polysilicon layer using Anodic Bonding method. And the processed silicon diaphragm assembly has a flat surface thereof, on which the piezoresistive elements and the conducting paths are constructed using Ion Implantation method, or reforming a silicon dioxide layer thereon after removing another silicon dioxide layer used as mask in diffusing process.

REFERENCES:
patent: 3397278 (1966-10-01), Pomerantz
patent: 3595719 (1971-07-01), Pomerantz
patent: 3918019 (1975-11-01), Nunn
patent: 3968466 (1976-07-01), Nakamura et al.
patent: 4023562 (1977-05-01), Hynecek et al.
patent: 4079508 (1978-03-01), Nunn

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