Semiconductive structure useful as a pressure sensor

Details Semiconductive structure useful as a pressure sensor Semiconductive structure useful as a pressure sensor

1989-03-06

1990-08-07

Woodiel, Donald O.

Measuring and testing

Fluid pressure gauge

Diaphragm

338 4, G01L 708, G01L 906

Patent

active

049457691

ABSTRACT:
A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.

REFERENCES:
patent: 4766666 (1988-08-01), Sugiyama et al.
patent: 4771638 (1988-09-01), Sugiyama et al.
patent: 4823605 (1989-04-01), Stein

Affiliated with

Also associated with

Rating

Semiconductive structure useful as a pressure sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductive structure useful as a pressure sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductive structure useful as a pressure sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-951634