Semiconductive stalk structure

Details Semiconductive stalk structure Semiconductive stalk structure

1989-03-06

1990-12-04

Prenty, Mark

357 47, 357 55, 357 56, H01L 2712

Patent

active

049757598

ABSTRACT:
A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is selectively removed from the bottom of the moat to expose silicon. An epitaxial stalk (a recessed mesa) is grown on the silicon at the bottom of the moat to a height which makes its top at least coplanar with the top surface of the substrate.

REFERENCES:
patent: 4688069 (1987-08-01), Joy et al.
IBM Technical Disclosure Bulletin, vol. 6 #4 p. 1301 Sep. 1973 by Broadie et al.

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