Semiconductive power cable shield

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428367, 428372, 428378, 428379, 428380, 428391, 428461, 428462, 428500, 428521, 428523, 524495, 524496, 174105SC, 174120SC, 174120SR, 252511, 427118, B32B 516, C08K 304

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055566979

ABSTRACT:
Vulcanizable semiconductive shield compositions contain a linear, single-site catalyzed polymer formed by polymerizing ethylene with at least one comonomer selected from C.sub.3 to C.sub.20 alpha-olefins; a carbon black selected from furnace carbon blacks that contain ash and sulfur in amounts of 50 ppm or less and have crystal dimensions L.sub.a and L.sub.c of 30 .ANG. or less, acetylene carbon blacks, and furnace carbon blacks having an ASTM grade of N-351; and a crosslinking agent. The compositions may be used to manufacture semiconductive shields for electrical conductors, such as power cables. The semiconductive shields exhibit improved processability, low water vapor transmission and low shrinkback, without abrading or corroding extrusion equipment.

REFERENCES:
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patent: 4305849 (1981-12-01), Kawasaki et al.
patent: 4376180 (1983-03-01), Turbett et al.
patent: 4440671 (1984-04-01), Turbett
patent: 4452937 (1984-06-01), Keough
patent: 4612139 (1986-09-01), Kawasaki et al.
patent: 4806594 (1989-02-01), Gross et al.
patent: 4857232 (1989-08-01), Burns, Jr.
patent: 5246783 (1993-09-01), Spenadel et al.
patent: 5352289 (1994-10-01), Weaver et al.
English language translation of JP 3255143, Nov. 1991.
English language translation of JP 4216840, Aug. 1992.

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