1983-06-17
1986-03-25
Davis, James W.
357 59, 357 84, H01L 2714, H01L 3100
Patent
active
045786933
ABSTRACT:
In a semiconductive photodetector device having a semiconductor substrate and a plurality of photodiodes juxtaposed in one major surface of the semiconductor substrate, exposed edges of adjacent pn junctions of adjacent photodiodes are covered with a polysilicon film.
REFERENCES:
Lin et al., "Shielded Silicon Gate Complementary MOS Integrated Circuit", Nov. 1972, pp. 1199-1207, IEEE Transactions on Electron Devices, vol. ED-19, No. 11.
Mukai et al., "Photodiode Arrays for Spectrometry Using UV Light," May 1982, pp. 161-165, IEEE, Proceeding of the Custom Integrated Circuit Conference.
Ikeda Takahide
Kamei Tatsuya
Miyakawa Nobuaki
Mukai Toji
Yazawa Yoshiaki
Davis James W.
Epps Georgia Y.
Hitachi , Ltd.
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