Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2004-08-20
2008-05-27
Wojciechowicz, Edward (Department: 2815)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S085000, C438S102000, C438S104000, C438S142000, C438S149000, C438S197000
Reexamination Certificate
active
07378286
ABSTRACT:
The present invention discloses a novel transistor structure employing semiconductive metal oxide as the transistor conductive channel. By replacing the silicon conductive channel with a semiconductive metal oxide channel, the transistors can achieve simpler fabrication process and could realize 3D structure to increase circuit density. The disclosed semiconductive metal oxide transistor can have great potential in ferroelectric non volatile memory device with the further advantages of good interfacial properties with the ferroelectric materials, possible lattice matching with the ferroelectric layer, reducing or eliminating the oxygen diffusion problem to improve the reliability of the ferroelectric memory transistor. The semiconductive metal oxide film is preferably a metal oxide exhibiting semiconducting properties at the transistor operating conditions, for example, In2O3or RuO2. The present invention ferroelectric transistor can be a metal-ferroelectric-semiconductive metal oxide FET having a gate stack of a top metal electrode disposed on a ferroelectric layer disposed on a semiconductive metal oxide channel on a substrate. Using additional layer of bottom electrode and gate dielectric, the present invention ferroelectric transistor can also be a metal-ferroelectric-metal (optional)-gate dielectric (optional)-semiconductive metal oxide FET.
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Hsu Sheng Teng
Lee Jong-Jan
Li Tingkai
Ripma David C.
Sharp Laboratories of America Inc.
Wojciechowicz Edward
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