Semiconductive member and production method thereof

Details Semiconductive member and production method thereof Semiconductive member and production method thereof

1997-09-24

1999-07-20

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

4284231, 399159, H01L 3524

Patent

active

059258934

ABSTRACT:
Semiconductive members such as charging members, copying members, pressure fixation rolls, electricity removing members and the like having a small environmental dependence are provided. The semiconductive member of the present invention contains a semiconductive substrate, a conductive rubber layer, an intermediate layer, a resistance control layer the constituent material of which is a polyurethane ionomer having an ionic segment in the molecule, and a surface layer. The ionic segment is selected from among a sulfonic acid group, a carboxyl group and a tertiary amino radical, or the salts thereof. In addition, the glass transition temperature of this polyurethane ionomer is 30.degree. C. or less, and the volume specific resistance value is in the range of 10.sup.6 to 10.sup.9 W cm.

REFERENCES:
patent: 4293474 (1981-10-01), Dieterich et al.
patent: 5639847 (1997-06-01), Chiang et al.
patent: 5705274 (1998-01-01), Inoue et al.
patent: 5761581 (1998-06-01), Nojima
Umeda Matsuzawa, Plastics Age (1994), pp. 104-109.

Affiliated with

Also associated with

Rating

Semiconductive member and production method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductive member and production method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductive member and production method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1323801