Semiconductive materials and associated uses thereof

Details Semiconductive materials and associated uses thereof Semiconductive materials and associated uses thereof

2008-08-29

2011-11-01

Porta, David (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

C250S370110, C250S36100C

Reexamination Certificate

active

08049178

ABSTRACT:
High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.

REFERENCES:
patent: 3549434 (1970-12-01), Aven
patent: 5187116 (1993-02-01), Kitagawa et al.
patent: 6080984 (2000-06-01), Friesenhahn
patent: 6093347 (2000-07-01), Lynch et al.
patent: 2005/0268841 (2005-12-01), Szeles et al.
patent: 2007/0193507 (2007-08-01), Szeles et al.
patent: 2009/0321730 (2009-12-01), Lynn et al.
patent: WO 2005048357 (2005-05-01), None
Brunett, B.A., et al., “Fine-Scale Spatial Response of CdZnTe Radiation Detectors,” IEEE Transactions on Nuclear Science, vol. 46, No. 3, pp. 237-242, Jun. 1999.
Bushuev, A.V., et al., “Possible Application of γ-Ray Spectrometers Based on CdZnTe Detectors,” Atomic Energy, vol. 92, No. 5, pp. 403-407, 2002.
Piotrowski, J., and W. Gawron, “Extension of longwavelength IR photovoltaic detector operation to near room-temperatures,” Infrared Physics & Technology, vol. 36, pp. 1045-1051, 1995.
International Search Report and Written Opinion issued Apr. 22, 2009 in International Application No. PCT/US2008/074912.
Biernacki, S. et al., “Electronic properties of A centers in CdTe: A comparison with experiment”, Phys. Rev. B 48, 11 726-731 (1993).
Castaldini, A. et al., “Compensation and deep levels in II-VI compounds”, Materials Science and Engineering B42, 302-305 (1996).
Hage-Ali, M. et al., Growth Methods of CdTe Nuclear Detector Materials, Semiconductors for Room Temperature Nuclear Detector Applications, T.E. Schlesinger and R.B. James, eds., Academic Press, 1995, pp. 219-222.
Krsmanovic, N. et al., “Electrical compensation in CdTe and Cd0.9Zn0.1Te by intrinsic defects”, Phys. Rev. B Rapid Comm. 62, R16 279-282 (2000).
Laks, D.B. et al., “Role of Native Defects in Wide-Band Gap Semiconductors”, Phys. Rev. Lett. 66, 648-651 (1991).
Lynn, K.G. et al., “Improved CdZnTe detectors grown by vertical Bridgman process”, Mat. Res. Soc. Proc. 484, 319-328 (1998).
Mandel, G., “Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory”, Phys. Rev. 134, A1073-1079 (1964).
Mankoff, D.A. et al., “The Effect of Detector Performance on High Countrate PET Imaging with a Tomograph Based on Position-Sensitive Detectors”, IEEE Transactions on Nuclear Science 35, 592-597 (1988).
Neumark, G.F., “Effect of deep levels on semiconductor carrier concentrations in the case of “strong”compensation”, Phys. Rev. B 26, 2250-2252 (1982).
Park, C.H. et al., “First-principles study of DX centers in CdTe, ZnTe and CdxZn1-xTe alloys”, Phys. Rev. B 52, 11 884-890 (1995).
Prener, J.S. et al., “Self-Activation and Coactivation in Zinc Sulfide Phosphors”, J. Chem. Phys. 25, 361 (1956).
Rudolph, P. et al. “Attempts to growth of undoped CdTe single crystals with high electrical resistivity”, J. Crystal Growth 161, 28-33 (1996).
Rudolph, P. et al., “Basic problems of vertical Bridgman growth of CdTe”, Mater. Sci. Eng. B16, 8-16 (1993).
Szeles, Cs. et al., “Trapping properties of cadmium vacancies in Cd1-xZnxTe”, Phys. Rev. B 55, 6945-6949 (1997).
Choe, S-H. et al., “Optical Properties of CdInGa0.96Er0.04S4Single Crystal,” Inst. Phys. Conf. Ser. No. 152: Section D: Optical and Electrical Properties, Paper presented at the 11th Conf. on Ternary and Multinary Compounds, ICTMC-11, Salford, Sep. 8-12, 1997, pp. 681-684.
Office Action issued Dec. 16, 2010 in U.S. Appl. No. 11/910,504, 10 pages.
International Search Report and Written Opinion issued Apr. 17, 2008 in International Application No. PCT/US2007/063330, 7 pages.
Office Action issued May 11, 2010 in Canada Application No. 2,644,536, 3 pages.

Affiliated with

Also associated with

Rating

Semiconductive materials and associated uses thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductive materials and associated uses thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductive materials and associated uses thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4253658