Semiconductive light-emitting device having strained MQW with Al

Details Semiconductive light-emitting device having strained MQW with Al Semiconductive light-emitting device having strained MQW with Al

1995-12-14

1999-07-06

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 97, 372 45, 372 47, H01L 2906, H01L 310328, H01L 3300

Patent

active

059200790

ABSTRACT:
The present invention provides a semiconductive light-emitting device involving a light-emitting layer of the multilayer strained quantum well structure that has a plurality of quantum well layers and a plurality of barrier layers, where each of said quantum well layers is constituted of a semiconductive crystal subjected to intraplanar compressive strain; each of the barrier layers is constituted of semiconductor crystal of AlInAs, AlGaInAs or AlGaInAsP. For high differential gain, each quantum well layer is 6nm thick or less, and the summed quantum well layers measure 13 to 1000 nm in thickness. Likewise, the invented scheme produces a light-emitting device involving a light-emitting layer of the multilayer strain compensation quantum well structure that has a plurality of quantum well layers and a plurality of barrier layers, where each of said quantum well layers is constituted of a semiconductive crystal subjected to intraplanar compressive strain; each of the barrier layers is constituted of semiconductor crystal of AlInAs, AlGaInAs or AlGaInAsP. For high differential gain, each quantum well layer is 6nm thick or less, and the summed quantum well layers measure 13 to 1000 nm in thickness.

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patent: 5574289 (1996-11-01), Aoki et al.
patent: 5583878 (1996-12-01), Shimizu et al.
patent: 5585957 (1996-12-01), Nakao et al.

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