Semiconductive GaAs wafer and method of making the same

Details Semiconductive GaAs wafer and method of making the same Semiconductive GaAs wafer and method of making the same

2008-01-15

2008-01-15

Hiteshew, Felisa (Department: 1722)

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

C117S017000, C117S018000

Reexamination Certificate

active

07318916

ABSTRACT:
A semiconductive GaAs wafer has a diameter of 4 inches or more, and an in-wafer plane dislocation density of 30,000/cm2or more and 100,000/cm2or less. A semiconductive GaAs wafer is made by growing a GaAs single crystal under a temperature gradient of 20° C./cm or more and 150° C./cm or less formed in the crystal so that the semiconductive GaAs wafer has an in-wafer plane dislocation density of 30,000/cm2or more and 100,000/cm2or less.

REFERENCES:
patent: 6866714 (2005-03-01), Kawase et al.
patent: 11-268997 (1999-10-01), None

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