Semiconductive devices utilizing MgTe, MgSe, ZnSe, ZnTe and allo

Details Semiconductive devices utilizing MgTe, MgSe, ZnSe, ZnTe and allo Semiconductive devices utilizing MgTe, MgSe, ZnSe, ZnTe and allo

1993-08-31

1995-01-03

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 319

Patent

active

053793137

ABSTRACT:
An injection laser for operation in the yellow to violet portion of optical spectrum utilizes an indium phosphide substrate on which are lattice matched three successive layers each of the form (MgSe).sub.x (ZnSeTe).sub.1-x, where x has a positive value for each layer up to 1 in the first and third layers but in the second layer has a value less than that of either the first or third layer and the first and third layers are doped to be of opposite conductivity type.

REFERENCES:
patent: 4955031 (1990-09-01), Jain
patent: 4992837 (1991-02-01), Sakai et al.
patent: 5010376 (1991-04-01), Nishimura et al.
patent: 5045897 (1991-09-01), Ahlgren
patent: 5081632 (1992-01-01), Migita et al.
patent: 5250814 (1993-10-01), Morita
patent: 5278856 (1994-01-01), Migita et al.
patent: 5299217 (1994-03-01), Migita et al.

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