Semiconductive ceramics

Details Semiconductive ceramics Semiconductive ceramics

1977-01-17

1979-03-06

Ansher, Harold

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Metal continuous phase interengaged with nonmetal continuous...

106 732, 106 733, 252 623BT, 252 623R, 252520, 252521, 428432, 428913, H01B 108, C04B 3546, C04B 3550, H01L 2138

Patent

active

041432070

ABSTRACT:
A composition consisting of 5 to 95 mol% of bismuth oxide (Bi.sub.2 O.sub.3) and 95 to 5 mol% of copper oxide (Cu.sub.2 O), or a composition consisting of 50 to 95 mol% of copper oxide (Cu.sub.2 O) and 50 to 5 mol% of manganese dioxide (MnO.sub.2), or a composition consisting of 5 to 95 mol% of bismuth oxide (Bi.sub.2 O.sub.3) and 95 to 5 mol% of manganese dioxide (MnO.sub.2), is thermally diffused in the grain boundaries of semiconductor ceramics composed mainly of strontium titanate (SrTiO.sub.3) to form highly insulating layers in the grain boundaries to thereby provide semiconductive ceramics wherein the rate of change of dielectric constant with temperature as well as the dielectric loss (tan .delta.) are smaller than in the conventional barium titanate type semiconductor products. Further, the insulation resistance is higher than in the conventional product.

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patent: 4022716 (1977-05-01), Ueoka et al.
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patent: 4061583 (1977-12-01), Murata et al.
patent: 4073846 (1978-02-01), Masumura et al.

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