Semiconductive ceramic materials with a voltage-dependent nonlin

Details Semiconductive ceramic materials with a voltage-dependent nonlin Semiconductive ceramic materials with a voltage-dependent nonlin

1983-12-16

1984-12-25

Parrish, John A.

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

252520, 264 65, 264 66, C04B 3546

Patent

active

044903189

ABSTRACT:
Semiconductive ceramic materials suitable for use in varistors, consisting essentially of a major proportion of Sr(.sub.1-x)Ca.sub.x TiO.sub.3, where x is from about 0.01 to about 0.50, the balance being at least one of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, WO.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Nd.sub.2 O.sub.3, Y.sub.2 O.sub.3, Sm.sub.2 O.sub.3, Pr.sub.6 O.sub.11 and Dy.sub.2 O.sub.3, and Na.sub.2 O. The ceramic materials may further comprise a minor proportion of at least one of Ag.sub.2 O, CuO, MnO.sub.2 and SiO.sub.2, and/or a minor proportion of Al.sub.2 O.sub.3. For the fabrication of ceramic bodies of the above compositions there are prepared mixtures of the noted ingredients in powdered form in various possible combinations, plus an organic binder. The mixtures are molded under pressure into desired shape. The moldings are first fired in a reductive or neutral atmosphere and then refired in an oxidative atmosphere. Na.sub.2 O can be included in the initial mixtures in the form of Na.sub.2 O itself and/or other Na compound such as NaF. Alternatively, either Na.sub.2 O itself or NaF is pasted and coated on the moldings after the initial firing thereof. The subsequent refiring of the coated moldings causes thermal diffusion of Na.sub.2 O therein.

REFERENCES:
patent: 4073846 (1978-02-01), Masumura
patent: 4339511 (1982-07-01), Morgan
patent: 4380559 (1983-04-01), Mandai
U.S. Serial Number 280,801 filed Jul. 6, 1981.

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