Semiconductive ceramic

Details Semiconductive ceramic Semiconductive ceramic

1996-12-27

1998-03-31

Jones, Deborah

Compositions: ceramic

Ceramic compositions

Titanate, zirconate, stannate, niobate, or tantalate or...

501138, C04B 697

Patent

active

057338337

ABSTRACT:
A semiconducting ceramic whose rush breakdown voltage is high and which hardly cracks during lamination is provided. In the semiconducting ceramic having a positive resistance-temperature characteristic, the ratio of intra-granular resistance of the crystal grains and inter-granular resistance between crystal grains which together determine the value of resistance of the semiconducting ceramic is set so that the intra-granular resistance is less than about 20% of the value of resistance of the semiconducting ceramic (not including 0%).

REFERENCES:
patent: 4861736 (1989-08-01), Ono et al.
patent: 4863883 (1989-09-01), Menashi et al.
patent: 5532197 (1996-07-01), Kim et al.
patent: 5604167 (1997-02-01), Wilson et al.

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