Semiconductive barium titanate

Details Semiconductive barium titanate Semiconductive barium titanate

1982-04-30

1983-05-24

Cooper, Jack

Compositions

Electrically conductive or emissive compositions

Carbide containing

252 623BT, 252518, 252520, 252521, 501137, 501139, H01B 108

Patent

active

043849890

ABSTRACT:
Semiconductive barium titanate having a positive temperature coefficient of resistance comprises a barium titanate semiconductor including barium titanate and a small quantity of a doping element, and at least one additive selected from among silicon nitride, titanium nitride, zirconium nitride and silicon carbide. The semiconductive barium titanate of this invention has a sharp rise in the variation of specific resistivity with temperature change and a large specific resistivity ratio in the PTC temperature region, and can be produced with high reproducibility, since a widely differing quantity of the doping element can be effectively added to barium titanate.

REFERENCES:
patent: 4347167 (1982-08-01), Payne et al.

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