Semiconductive arrangement having dissimilar, laterally spaced l

Details Semiconductive arrangement having dissimilar, laterally spaced l Semiconductive arrangement having dissimilar, laterally spaced l

1990-02-09

1991-09-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 90, 437 54, 437 33, 148DIG152, H01L 3115, H01L 3170, H01L 2120, H01L 21302

Patent

active

050495224

ABSTRACT:
A depression is formed by mesa etching or the like in the surface of an insulative substrate. A first semiconductive layer structure such as a PNP layer structure is formed on the surface including the depression. An electrically insulative isolation layer is formed on the first layer structure, and then a second layer structure such as an NPN layer structure is formed on the isolation layer. The area over the depression is then masked, and the second layer structure and isolation layer are etched away from the first layer structure over areas of the surface external of the depression. Where the thicknesses of the first and second layer structures are equal, and the depth of the depression is equal to the combined thicknesses of the first layer structure and the isolation layer, the second layer structure laterally external of the depression will be coplanar with the first layer structure over the depression. Dissimilar microelectronic devices such as complementary heterojunction bipolar transistors may be formed in the exposed surfaces of the first and second layer structures respectively by common and simultaneous processing.

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