Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
1999-12-22
2001-03-20
Meier, Stephen D. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S401000
Reexamination Certificate
active
06204515
ABSTRACT:
FIELD OF THE INVENTION
The instant invention is in the field of transistors. More specifically, the instant invention is in the field of transistors based on semiconducting polymers.
BACKGROUND OF THE INVENTION
Transistors are important electronic devices. Metal oxide semiconductor field effect transistors (MOS FET) are well-known.
SUMMARY OF THE INVENTION
A field effect transistor comprises five elements. The first element is an insulator layer, the insulator layer being an electrical insulator, the insulator layer having a first side and a second side. The second element is a gate, the gate being an electrical conductor, the gate being positioned adjacent the first side of the insulator layer. The third element is a semiconductor layer, the semiconductor layer comprising a polymer, at least ten weight percent of the monomer units of the polymer being selected from the group consisting of a 9-substituted fluorene unit and a 9,9-substituted fluorene unit, the semiconductor layer having a first side, a second side, a first end and a second end, the second side of the semiconductor layer being adjacent the second side of the insulator layer. The fourth element is a source, the source being an electrical conductor, the source being in electrical contact with the first end of the semiconductor layer. The fifth element is a drain, the drain being an electrical conductor, the drain being in electrical contact with the second end of the semiconductor layer. A negative voltage bias applied to the gate causes the formation of a hole conduction channel in the semiconductor layer connecting the source to the drain. A positive bias applied to the gate causes the formation of an electron-conducting channel in the semiconductor layer.
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Bernius Mark T.
Woo Edmund P.
Meier Stephen D.
The Dow Chemical Company
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