Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-01-28
1992-12-22
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 51, 257 66, 257 73, 257 77, 257288, 257613, 257921, H01L 2904, H01L 2701, H01L 2980, H01L 29161
Patent
active
051737612
ABSTRACT:
A method and apparatus for contructing diamond semiconductor structures made of polycrystalline diamond thin films is disclosed. The use of a polycrystalline diamond deposition on a substrate material provides an advantage that any substrate material may be used and the ability to use polycrystalline diamond as a material is brought about through the use of an undoped diamond layer acting as an insulating layer which is formed on a boron-doped layer. Because of the structure, ion implantation can be employed to reduce the ohmic contact resistance. The ion implantation also provides that the entire structure can be made using a deep implant to form a channel layer which allows the insulating gate structure to be formed as an integral part of the device. The buried channel can be doped through the use of several implantation steps through the insulating undoped layer. As a result, the process and device is able to provide active polycrystallline diamond devices which have excellent resistance and reverse voltage characteristics while having an increased temperature capacity and increased range of operational environmental conditions when contrasted with the silicon technology. Furthermore with the disclosed process and devices, there is no requirement for a single crystal diamond substrate.
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Das Kumar
Dreifus David L.
Kobashi Koji
Miyata Koichi
Carroll J.
Kobe Steel USA Inc., Electronic Materials Center
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