Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-05-31
2011-05-31
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE21448, C438S195000
Reexamination Certificate
active
07952088
ABSTRACT:
The present invention, in one embodiment, provides a semiconductor device including a substrate having an dielectric layer; at least one graphene layer overlying the dielectric layer; a back gate structure underlying the at least one graphene layer; and a semiconductor-containing layer present on the at least one graphene layer, the semiconductor-containing layer including a source region and a drain region separated by an upper gate structure, wherein the upper gate structure is positioned overlying the back gate structure.
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Iikawa et al , “Metamorphosis of Ultra-Thin Top Si Layer of SOI Substrate Into 3C-Sic Using Rapid Thermal Process” H., Osaka Prefecture University, 2004IMFEDK.
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Anderson Brent A.
Nowak Edward J.
Ahmed Selim
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Pert Evan
Scully , Scott, Murphy & Presser, P.C.
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