Semiconducting ceramics containing vanadium oxide

Details Semiconducting ceramics containing vanadium oxide Semiconducting ceramics containing vanadium oxide

1976-02-17

1977-05-10

Miller, Edward A.

Compositions

Electrically conductive or emissive compositions

Metal compound containing

106 7331, 264104, 252 623BT, H01B 108

Patent

active

040227162

ABSTRACT:
Semiconducting ceramics are produced by firing a semiconducting composition of the barium titanate type containing vanadium oxide in the amount of 0.001 to 0.5 wt%. A change in the specific resistance over the range of the temperature at which the positive temperature coefficient characteristic of resistivity (PTCR) is exhibited can be increased by as much as 10.sup.5 times and the specific resistance value at room temperature can be controlled at a desired value. By further adding silicon dioxide to the above composition in the amount of 0.05 to 1.5 wt% the above effects can be enhanced, especially the specific resistance at ambient temperature.

REFERENCES:
patent: 3426249 (1969-02-01), Smyth
patent: 3586642 (1971-06-01), Matsuo et al.
Chemical Abstracts 81, 178859x, "Barium Titanate Semiconductive Ceramic."

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