Semiconducter device having an emitter terminal separated from a

Details Semiconducter device having an emitter terminal separated from a Semiconducter device having an emitter terminal separated from a

1994-11-30

1996-04-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257760, 257587, 257639, 257640, 257649, 257588, H01L 2358

Patent

active

055127851

ABSTRACT:
A semiconductor device (8) has an insulating layer (16) overlying a semiconductor substrate (12). The insulating layer has a first opening that defines an aperture (18) extending from the insulating layer to the semiconductor substrate, and at least a first portion of a first conductive terminal (42) is disposed in the aperture. A second conductive terminal (52) has a second portion (28) disposed in the aperture. The second portion of the second conductive terminal is separated from the first conductive terminal by a composite dielectric layer including a nitride layer (32) and an oxide layer (30). In one approach, the oxide layer is formed by the oxidation of the second portion of the second conductive terminal.

REFERENCES:
patent: 5101256 (1992-03-01), Harame et al.
patent: 5109262 (1992-04-01), Kadota et al.
patent: 5137840 (1992-08-01), Desilets et al.
patent: 5235206 (1993-08-01), Desilets et al.
patent: 5345102 (1994-09-01), Matsumoto
patent: 5391905 (1995-02-01), Yamazaki
patent: 5397912 (1995-03-01), Sundaram

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