Semicondcutor device with improved contact

Details Semicondcutor device with improved contact Semicondcutor device with improved contact

1993-12-02

1996-04-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

257632, 257638, 257774, H01L 2358

Patent

active

055127789

ABSTRACT:
A semiconductor device with an improved contact capable of improving junction breakdown voltage and junction leakage current by forming a contact at an active region without damaging bird' beak portions of its element-isolation oxide films and a method of making this semiconductor device. The semiconductor device comprises element-isolation oxide films formed on a semiconductor substrate, an etch barrier material film formed on bird's beak portions of element-isolation oxide films, an insulating film formed over the element-isolation oxide films and the etch barrier material layer, and a conductive material layer formed over the insulating film and in contact with the active region. In order to prevent the bird's beak portions of element-isolation oxide films from being damaged upon the formation of contact hole, the etch barrier material film has an etch selectivity different from that of a silicon oxide film formed on the active region.

REFERENCES:
patent: 5169800 (1992-12-01), Kobayashi

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