Semi-insulating wafer

Details Semi-insulating wafer Semi-insulating wafer

1995-06-30

1998-06-30

Speer, Timothy

Stock material or miscellaneous articles

Composite

Of silicon containing

428448, 428469, 428689, 428697, 428699, 428700, 428701, 428702, B32B 904

Patent

active

057731519

ABSTRACT:
A bonded wafer 10 has a silicon device layer 20 bonded to a layer of semi-insulating material 14, preferably a mobility degraded silicon such as polycrystaline silicon. Layer 14 is thick enough and substrate 16 is conductive enough to reduce resistive losses when devices in layer 20 are operated at frequencies above 0.1 Ghz. Substrate 16 is conductive enough and semi-insulating material 14 is resistive enough to prevent cross-talk among devices in layer 20.

REFERENCES:
patent: 4538167 (1985-08-01), Yoshino et al.
patent: 4819037 (1989-04-01), Sakakibara et al.
patent: 4851257 (1989-07-01), Young
patent: 4903108 (1990-02-01), Young
patent: 4914501 (1990-04-01), Rivoli
patent: 4984052 (1991-01-01), Koshino et al.
patent: 5206523 (1993-04-01), Goesele et al.
patent: 5266135 (1993-11-01), Short
patent: 5334273 (1994-08-01), Short
patent: 5422299 (1995-06-01), Neudeck et al.
S. A. Campbell, "The Possibility of Semi-Insulating Silicon Wafers", 1995 IEEE MTT-S International Microwave Symposium Workshop WFFA Silicon RF Technology, pp. 1-7, May 1995.
M. H. Hanes, et al. "MICROX.TM.-An All Silicon Technology For Monolithic Microwave Integrated Circuits", IEEE Electron Device Letters, vol. 14, No. 5, pp. 219-221, May 1993.
E. H. Nicollian and J. R. Brews, "MOS (Metal Oxide Semiconductor) Physics and Technology", John Wiley & Sons, New York, (1982), pp. 749-750.
K. Anzai, F. Otoi, M. Ohnishi, and H. Kitabayashi, "Fabrication Of High Speed 1 micron FIPOS/CMOS", Electronics Devices Group Oki Electric Industry Co. Ltd., Japan, (1984), pp. 796-799.
H. Takai and T. Itch, "Porous Silicon Layers And Its Oxide For The Silicon-On-Insulator Structure", J. Appl. Phys. vol. 60, No. 1., (Jul. 1, 1986), pp. 222-225.
"Polysilicone Layer With Oxygen Improves Devices", Electronics International, vol. 48, No. 13, Jun. 26, 1975, pp. 5E-6E, XP002013570.

Affiliated with

Also associated with

Rating

Semi-insulating wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semi-insulating wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semi-insulating wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1857075