Semi-insulating INP single crystals, semiconductor devices havin

Details Semi-insulating INP single crystals, semiconductor devices havin Semi-insulating INP single crystals, semiconductor devices havin

1991-02-28

1992-12-22

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

Having at least three contiguous layers of semiconductive...

437 42, 257387, 257368, H01L 2912

Patent

active

051731274

ABSTRACT:
A semi-insulating InP single crystal, semiconductor device with a substrate of crystal and processes of producing the same are disclosed. The crystal is derived from an undoped InP single crystal intermediate. The intermediate has a concentration of all native Fe, Co and Cr of 0.05 ppmw or less. The crystal has a resistivity of 1.times.10.sup.6 .OMEGA..multidot.cm or more and a mobility of above 3,000 cm.sup.2 /V.multidot.s both at 300 K. A process of producing the crystal includes a step of heat-treating the intermediate under 6 kg/cm.sup.2 of phosphorus vapor pressure. The produced semiconductor device is a MIS device operating in essentially the same high-speed manner as a HEMT.

REFERENCES:
patent: 4004953 (1977-01-01), Otsubo et al.
patent: 4268844 (1981-05-01), Meiners
Applied Physics, vol. A48, 1989, pp. 315-319, New York, US; D. Hofmann et al. "Semi-insulating Electrical Properties of Undoped InP after Heat Treatment in a Phosphorus Atmosphere".

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