Semi-insulating group III-V based compositions doped using bis a

Details Semi-insulating group III-V based compositions doped using bis a Semi-insulating group III-V based compositions doped using bis a

1987-06-04

1988-11-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG23, 148DIG110, 148DIG56, 156613, 156614, 437104, 437959, 437987, H01L 21285, H01L 21205, H01L 736

Patent

active

047820349

ABSTRACT:
Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by an MOCVD process through the use of bis arene titanium sources, such as cyclopentadienyl cycloheptatrienyl titanium and bis (benzene) titanium.

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