Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2007-01-30
2007-01-30
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C438S479000, C257SE33023
Reexamination Certificate
active
10618024
ABSTRACT:
Large-area, single crystal semi-insulating gallium nitride that is usefully employed to form substrates for fabricating GaN devices for electronic and/or optoelectronic applications. The large-area, semi-insulating gallium nitride is readily formed by doping the growing gallium nitride material during growth thereof with a deep acceptor dopant species, e.g., Mn, Fe, Co, Ni, Cu, etc., to compensate donor species in the gallium nitride, and impart semi-insulating character to the gallium nitride.
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Brandes George R.
Vaudo Robert P.
Xu Xueping
Coleman W. David
Cree Inc.
Gustafson Vincent K.
Intellectual Property / Technology Law
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