Metal treatment – Stock – Ferrous
Patent
1977-03-22
1979-06-19
Clawson, Jr., Joseph E.
Metal treatment
Stock
Ferrous
357 58, 357 64, 148 33, 252 623GA, H01L 29167
Patent
active
041588517
ABSTRACT:
In a semi-insulating gallium arsenide single crystal containing at least one of deep acceptor impurities and at least one of deep donor impurities and having a resistivity of at least about 10.sup.6 .OMEGA..multidot.cm at 300 .degree. K., (1) at least one of the deep donor impurities is oxygen, the oxygen concentration in the single crystal being at least about 4.times.10.sup.16 cm.sup.-3, while the silicon concentration in the single crystal being simultaneously at most about 2.times.10.sup.15 cm.sup.-3, (2) at least one of the deep acceptor impurities is chromium, the chromium concentration in the single crystal being within a range of about 3.times.10.sup.15 to about 3.times.10.sup.17 cm.sup.-3 and (3) at least one of tellurium, tin, selenium and sulfur is contained as another shallow donor impurity than silicon so to satisfy the relationship of N.sub.AA >N.sub.D -N.sub.A >-N.sub.DD wherein N.sub.AA represents the sum of concentrations of the deep acceptor impurities including chromium, N.sub.DD represents the sum of concentrations of the deep donor impurities including oxygen, N.sub.D represents the sum of concentrations of the shallow donor impurities including electrically active lattice defects and N.sub.A represents the sum of concentrations of the shallow acceptor impurities including electrically active lattice defects.
REFERENCES:
patent: 3344071 (1967-09-01), Cronin
patent: 3994755 (1976-11-01), Kamath et al.
patent: 4004953 (1977-01-01), Otsubo et al.
A. Ferro et al., "Properties of Gallium Arsenide Double-Injection Devices", J. of Applied Physics, vol. 42, No. 10, Sep. 1971, pp. 4015-4024.
Akai Shin-ichi
Fujita Keiichiro
Nishida Yasuhiro
Clawson Jr. Joseph E.
Sumitomo Electric Industries Ltd.
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