Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1996-02-23
1997-03-04
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257102, 257103, 372 45, 372 46, 372 49, H01L 3300
Patent
active
056082347
ABSTRACT:
Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction capacitance as well as the use of a semi-insulating blocking layer and a conductive substrate. Furthermore, a light absorbing layer is disposed on one side of an unetched portion of the semi-insulating material and an active layer disposed on an opposite side of the unetched portion. Also, the interface of the semi-insulating material and the active and absorbing layers are at prescribed angles that reduce back reflections to the absorbing and active layers. This arrangement reduces pumping in the absorbing region and thus reduces the lasing effect, allowing for a stable LED. The angle at the interface is determined by having the structure at a predetermined crystallographic direction and having the semi-insulating material etched to reveal a predetermined crystalline plane.
REFERENCES:
patent: 4210923 (1980-07-01), North et al.
patent: 4637122 (1987-01-01), Carney et al.
patent: 4660208 (1987-04-01), Johnston, Jr. et al.
patent: 4692926 (1987-09-01), Marschall et al.
patent: 4845724 (1989-07-01), Hayakawa et al.
patent: 5003358 (1991-03-01), Takahashi et al.
patent: 5018159 (1991-05-01), Suzuki et al.
patent: 5084893 (1992-01-01), Sekii et al.
patent: 5093696 (1992-03-01), Kinoshita
patent: 5100833 (1992-03-01), Takahashi et al.
patent: 5122844 (1992-06-01), Akiba et al.
patent: 5128276 (1992-07-01), Ambrosius et al.
patent: 5135877 (1992-08-01), Albergo et al.
patent: 5148439 (1992-09-01), Wunstel et al.
patent: 5179567 (1993-01-01), Uomi et al.
patent: 5194399 (1993-03-01), Takahashi et al.
patent: 5272106 (1993-12-01), Hirtz et al.
patent: 5275968 (1994-01-01), Takahashi et al.
patent: 5309467 (1994-05-01), Terakado
patent: 5325385 (1994-06-01), Kasukawa et al.
patent: 5345464 (1994-09-01), Takemoto
patent: 5440147 (1995-08-01), Kazmierski et al.
"InGaAsP/InP Planar Buried Heterostructure Lasers with Semi-Insulating InP Current Blocking Layers Grown by MOCVD; IEEE Journal of Quantum Electronics"; K. Wakao et al.; vol. QB-23; No. 6; Jun. 1987.
Journal of Crystal Growth; "Transition Metal Doping of LP-MOCVD-Grown InP"; T. Wolf et al.; 1991.
IEEE Journal of Quantum Electronics; "Lateral npn Junction and Semi-Insulating GaAs Current Continement Structure for Index-Guided InGaAs/AlGaAs Lasers by Molecular Beam Epitaxy"; T. Takamori et al.; vol. 29; No. 6, Jun. 1993.
Inst. Phys. Conf. Ser. No. 91; Chapter 3; "Ti-Fe Co-doped semi-insulating InP grown by MOVPE"; A. Dentai et al.; 1987.
Jouranl Applied Physics; "Growth and Characterization of Fe-doped semi-insulating InP prepared by low-pressure organometallic vapor phase epitaxy with tertiarybutylphosphine" Rong-Ting Huang et al.; 1991.
"Cavity Length Dependence of Optical Characteristics in High Power Narrow Stripe GaAs Superluminescent Diodes"; IEEE Photonics Technology Letters; K. Imanka; vol. 2; No. 10; pp. 705-707; Oct. 1990.
"High Performance 1.3 .mu.m Buried Crescent Lasers and LEDs for Fiber Optic Links"; SPIE Laser Diode Technology and Applications; R. J. Fu et al.; vol. 1043, pp. 221-225, Jan. 1988.
"High Output Power GaInAsP/InP Superluminescent Diode at 1.3 .mu.m"; Electronics Letters; Y. Kashima et al.; vol. 24, pp. 1507-1508; Nov. 1988.
"InGaAsP/InP/InP Long Wavelength High Efficiency Edge Emitting LED for Single Mode Fiber Optic Communication"; Proceedings of FOC/LAN '87, pp. 379-382, Oct. 1987; T. Tsubota et al.
IEEE Journal of Quantum Electronics; "GaInAsP/InP Surface Emitting Injection Lasers With Short Cavity Length"; H. Soda et al.; vol. QE-19; No. 6; Jun. 1983.
IEEE Journal Of Quantum Electronics; "Circular Buried Heterostructure (CBH) GaAlAs/GaAs Surface Emitting Lasers"; S. Kinoshita et al., vol. QE-23; No. 6; Jun. 1987.
Journal of Lightwave Technology; "GaInAsP/InP Surface-Emitting Lasers With Current Confining Structure"; S. Uchiyama et al.; vol. LT-4; No. 7; Jul. 1986.
Applied Physics Letter; "Resonant Cavity Light-Emitting Diode"; E. F. Schubert et al.; vol. 60, No. 8; Feb. 24, 1992.
IEEE Photonics Technology Letters; "Resonant Cavity Light Emitting Diode And Detector Using Epitaxial Liftoff"; B. Corbett et al.; vol. 5, No. 9, Sep. 1993.
American Electroplaters And Surface Finishers Society, Inc. 80th Annual Conference-Anaheim; "Novel Plating Technique On Electrically Isolated Mesas With Non-Planar Surface"; Ching-Long Jiang; 1993.
Sumitomo Electric Technical Review; "Development of Mesa LEDs for 1 Gbps Fiberoptic Communications"; K. Ogata et al.; No. 34; Jun. 1992.
Sasaki et al, "A 2.5 mA Threshold Current Operation and 5 G bit/s Zero-Bias Current Modulation of 1.5-.mu.m MQW-DFB Laser Diodes," Optical Fiber Communication Conference, 22-26 Jan. 1990, Optical Society of America, Wash., D.C. 1990.
Miller et al, "Tertiarybutlylarsine as a Substitute for AsH.sub.3 : Application To InGaAs/InP Photonic Integrated Circuits," Second International Conference: Indium Phosphide and Related Materials, Apr. 23-25, 1990, Denver, Colo., IEEE 1990, pp. 161-164.
Sasaki et al, "A 2.5-mA Threshold Current Operation and 5-Gbit/s Zero-Bias-Current Modulation of 1.5-.mu.m MQW-DFB Laser Diodes" Optical Fiber Communication Conference, 1990 Technical Digest Series, vol. 1, Conference Edition, Jan. 22-26, 1990, San Francisco, CA p. 213.
Francos W. S.
Mintel William
The Whitaker Corporation
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