Semi-insulating cobalt doped indium phosphide grown by MOCVD

Details Semi-insulating cobalt doped indium phosphide grown by MOCVD Semi-insulating cobalt doped indium phosphide grown by MOCVD

1988-05-13

1991-09-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG23, 148DIG40, 148DIG110, 437 94, 437959, 437971, 156613, H01L 2120

Patent

active

050454960

ABSTRACT:
A process is described for growing at least one layer doped with a transition element of cobalt on a substrate by introducing a source of indium, such as tri ethyl indium, (C.sub.2 H.sub.5).sub.3 In or, a source of a group V element, a source of the transition element, such as cobalt nitrosyl tricarbonyl CO(NO)(CO).sub.3, and a source of phosphorus, to the substrate heated in an inert or reducing atmosphere at a pressure substantially between 1/100 atmosphere and one atmosphere to grow at least one semi-insulating semiconductor layer on the substrate.

REFERENCES:
patent: 4321073 (1982-03-01), Blair
patent: 4332974 (1982-06-01), Fraas
patent: 4578126 (1986-03-01), Rezek et al.
patent: 4864581 (1989-09-01), Nelson et al.
Hess et al, "Semi-Insulating InP Grown by Low Pressure MOCVD", J. Electron. Mat., vol. 16, No. 2, Mar. 1987, pp. 127-131.

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