Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2005-08-30
2005-08-30
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
Reexamination Certificate
active
06936101
ABSTRACT:
A semi-insulating zinc-oxide (ZnO) single crystal. The crystal has resistivity of at least 1.5×103ohm-centimeter (Ω-cm). The ZnO crystal can be produced from a melt contained by solid-phase ZnO to prevent introduction of undesired impurities into the crystal. The crystal can be a bulk single crystal that is cut and processed into wafer form of specified thickness. A dopant in a concentration ranging from 1×1015atoms per cubic centimeter (atoms/cc) to 5×1021atoms/cc can increase resistivity of the crystal relative to intrinsic ZnO. The dopant can be lithium (Li), sodium (Na), copper (Cu), nitrogen (N), phosphorus (P), and/or manganese (Mn).
REFERENCES:
Y. Liu, C.R. Gorla, S. Liang, N. Emanetoglu, Y. Lu, H. Shen, and M. Wraback, “Ultravoilet Detectors Based On Epitaxial ZnO Films Grown by MOCVD,” Journal of Electronic Materials, vol. 29, No. 1, 2000, May 11, 1999, pp. 69-74, Adelphi, Maryland.
M. Joseph, H. Tabata, H. Saeki, K. Ueda, T. Kawai, “Fabrication of the low-resistive p-type ZnO by codoping method,” Physcia B 302-303 (2001) pp. 140-148, Osaka, Japan.
Jin-Bock Lee, Hye-Jung Lee, Soo-Hyung Seo, Jin-Seok Park, “Characeterization of undoped and Cu-doped Zno Films for surface acoustic wave applications,” Thin Solid Films 398-399 (2001) pp. 641-646, Ansan, South Korea.
V.A. Nikitenko, “Luminescence and EPR of Zinc Oxide (Review),” Moscow Institute of Railway Engineers, Moscow, Russia, vol. 57 Nos. 5-6 ppgs. 367-385, May 18, 1992.
Nause Jeff
Nemeth William Michael
Alston & Bird LLP
Cermet, Inc.
Hiteshew Felisa
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