Semi-conductor with manganese oxide matrix

Details Semi-conductor with manganese oxide matrix Semi-conductor with manganese oxide matrix

1974-09-23

1976-03-30

Douglas, Winston A.

Compositions: coating or plastic

Coating or plastic compositions

Metal-depositing composition or substrate-sensitizing...

106 65, 106 734, 252519, 252521, C04B 3300

Patent

active

039472809

ABSTRACT:
An improved ceramic article useful after firing as an electrical suppressor element especially suitable for use in spark plugs is disclosed. The suppressor element is an aluminum-manganese oxide composition modified with a strontium compound which optionally may contain a nickel compound. The numerical value of the atom ratio of the article ##EQU1## IS CONTROLLED FROM 0.1 TO 1.5. The strontium/aluminum atom ratio has a value of from 0.5:1 to 0.95:1. The manganese constitutes from 50 percent to 100 percent based upon the total atoms of manganese and nickel present. The temperature coefficient of resistance of the suppressor, defined by ##EQU2## is between about -2.8%/.degree.C and -1.3%/.degree.C.

REFERENCES:
patent: 1572730 (1926-02-01), Locke
patent: 2120338 (1938-06-01), McDougal
patent: 2152656 (1939-04-01), McDougal
patent: 2290107 (1942-07-01), Luks
patent: 2450532 (1948-10-01), Tognola
patent: 2760875 (1956-08-01), Schwartzwalder
patent: 3238048 (1966-03-01), Somers
patent: 3291619 (1966-12-01), Luks
patent: 3686007 (1972-08-01), Gion

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