Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-10-11
1995-05-02
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 13, 257 14, 257 96, H01L 29161, H01L 2120
Patent
active
054122260
ABSTRACT:
An opto-electronic component comprises a substrate of InP (4, 5) with stacks of quantum wells (6) grown on both surfaces of the substrate. Layers (7) of n doped InP having p-doped regions (8) are formed on the outer surface of the quantum well structures. In use, voltages V1 and V2 may be applied to electrodes (1) enabling the component to be used for a number of applications, e.g. as a detector/modulator pair, in close coupled arrays of modulators, etc.
REFERENCES:
patent: 4205331 (1980-05-01), Esaki et al.
patent: 4814847 (1989-03-01), Tabatabale
Electronics Letters, 17th Jul. 1980, vol. 16, No. 15, "GaAs-GaAlAs Phototransistor/Laser Light Amplifier", Beneking et al., pp. 602 & 603.
Electronics Letters, 8th Dec. 1988, vol. 24, No. 25, "Planar 3.times.3 Array . . . by Gas-Source MBE", Rejman-Greene et al., pp. 1583 & 1584.
Electronics Letters, 27th Apr. 1989, vol. 25, No. 9, "5--5 GHz Multiple Quantum Well Reflection Modulator", Boyd et al., pp. 558 & 559.
Electronics Letters, 27th Apr. 1989, vol. 25, No. 9, "High-Contrast Reflection . . . Fabry-Perot Structure", Whitehead et al., pp. 566-568.
Applied Physics Letters, 51(20), 16 Nov. 1987, "Electroabsorption in AlGaAs/GaAs . . . transparent substrate", Lee et al., pp. 1582-1584.
Rejman-Greene Marek A. Z.
Scott Edward G.
British Telecommunications public limited company
Jackson Jerome
Kelley Nathan K.
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