Semi-conductor non-volatile optical memory device

Details Semi-conductor non-volatile optical memory device Semi-conductor non-volatile optical memory device

1974-07-12

1976-04-13

Hecker, Stuart N.

Communications: electrical

Digital comparator systems

340173R, 357 13, 357 19, 357 23, 357 30, G11C 1142

Patent

active

039507386

ABSTRACT:
A semiconductor non-volatile optical memory device is constructed by providing light-permeable charge retention means in an insulating layer on a first semiconductor surface into which photo-generated carriers in the surface of the first semiconductor region are injected over the semiconductor-insulator potential barrier by applying reverse bias between the first semiconductor region and a second region forming a rectifying junction with the first semiconductor region. Also disclosed in a non-volatile memory integrated circuit employing one or more of said devices together with light source in the same package. The non-volatile memory integrated circuit operates under low bias voltage and is compatible with a high speed integrated logic circuits.

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patent: 3789369 (1974-01-01), Lile et al.
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Agusta et al., Nonvolatile Imaging Devices, IBM Technical Disclosure Bulletin, Vol. 15, No. 9, 2/73, p. 2821.
Laibowitz et al., Four-Terminal Field-Effect Device, IBM Technical Disclosure Bulletin, Vol. 13, No. 12, 5/71, pp. 3791-3792.
Terman, Floating Avalanche-Injection Metal-Oxide Semiconductor Device with Low-Write Voltage, IBM Technical Disclosure Bulletin, Vol. 14, No. 12, 5/72, p. 3721.

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