Semi conductor memory cell utilizing sensing of variations in PN

Details Semi conductor memory cell utilizing sensing of variations in PN Semi conductor memory cell utilizing sensing of variations in PN

1976-08-23

1977-07-19

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 42, 357 43, 357 54, 307304, 340173R, H01L 2978, H01L 2702, H01L 2934

Patent

active

040372430

ABSTRACT:
Charge is stored on the gate of a gate controlled diode in a memory element to provide a junction breakdown memory cell. A quantity of charge representative of a logical 1 or a logical 0 may be dynamically stored in one embodiment. In another embodiment a composite silicon nitride/silicon dioxide dielectric is utilized to provide non-volatile storage of a logic state. Selection and sensing circuitry are coupled to an array of junction breakdown memory elements. Sensing circuitry detects the difference in reverse current of the gate controlled diode corresponding to a stored logical 1 and a stored logical 0, respectively.

REFERENCES:
patent: 3397326 (1968-08-01), Gallagher et al.
patent: 3418493 (1968-12-01), Uzunoglu et al.
patent: 3653002 (1972-03-01), Goffee
patent: 3816769 (1974-06-01), Crowle
patent: 3846766 (1974-11-01), Nojima et al.
patent: 3877058 (1975-04-01), Cricchi
patent: 3881180 (1975-04-01), Gosney

Affiliated with

Also associated with

Rating

Semi conductor memory cell utilizing sensing of variations in PN does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semi conductor memory cell utilizing sensing of variations in PN, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semi conductor memory cell utilizing sensing of variations in PN will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2296698