Semi-conductor lasers

Details Semi-conductor lasers Semi-conductor lasers

1983-02-23

1985-09-17

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

045425116

ABSTRACT:
In a semi-conductor laser of buried active laser layer type, the laser layer is located between a layer of n-type material and a layer of p-type material, the sides of the active laser layer and at least a portion of the n-type layer and the p-type layer being covered with a plurality of thin layers with a doping sequence such that a large number of p-n junctions are included in the plurality of thin layers.

REFERENCES:
patent: 4366569 (1982-12-01), Hirao et al.
patent: 4426702 (1984-01-01), Yamashita et al.
"Buried Heterostructure 1.3 .mu.m Lasers with Multiple Layer Infill," Goodfellow et al., IOOC 1981, 3rd International Conference on Integrated Optics and Optical Fiber Communication, San Francisco, Apr. 27-29, 1981, pp. 54-55.
"High Power Output InGaAsP/InP Buried Heterostructure Lasers," vol. 17, No. 21, pp. 782-783, published Oct. 15, 1981, Electronics Letters.
"Low-Threshold Current CW Operation of Multiple Infil Buried Heterostructure 1.3 .mu.m GaInAsP Lasers," Plastow et al., Electronics Letters, vol. 18, No. 6, pp. 262-263, published Mar. 18, 1982.

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