Semi-conductor device capable of supporting high amperages of in

Details Semi-conductor device capable of supporting high amperages of in Semi-conductor device capable of supporting high amperages of in

1975-07-03

1977-04-19

Edlow, Martin N.

357 59, 357 89, 357 20, 357 60, H01L 2990, H01L 2904

Patent

active

040191958

ABSTRACT:
The present invention relates to a surge arrester or transient voltage clipper device comprising a quasi-monocrystalline semiconductor (silicon for instance), with an extra large etch pit density or low-angle boundary grains. At these dislocation lines the dopant is present in a larger concentration, and multiple p.sup.+-n.sup.+ junctions are formed preferentially at these grain boundaries as an external impurity of the opposite type to the background dopant is diffused preferentially through these dislocation lines.

REFERENCES:
patent: 3436282 (1969-04-01), Shoda

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