Semi conductor device and process for fabrication of same

Details Semi conductor device and process for fabrication of same Semi conductor device and process for fabrication of same

1988-08-25

1992-01-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437101, 437 71, 437173, 437239, 437170, H01L 3118

Patent

active

050843990

ABSTRACT:
In a contact type image sensor prepared by disposing a plurality of sandwich type photoelectric conversion elements each of which is obtained by sandwiching an amorphous semiconductor layer as a photoelectric conversion layer between a metal electrode and a light-transmissive electrode, the amorphous semiconductor layer is insulated and separated by means of a silicon oxide layer in every element. The silicon oxide layer is obtained by oxidizing selectively the amorphous semiconductor layer in accordance with the optically assisted anodizing process.

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