Semi-conductor device

Details Semi-conductor device Semi-conductor device

1988-09-21

1991-01-01

Wojciechowicz, Edward J.

357 15, 357 2314, H01L 2980, 357, 357

Patent

active

049822470

ABSTRACT:
A semiconductor device, such as a GaAs FET, has low-noise, ultra-high frequency operation. The semiconductor device has at least one bonding pad for applying potential to the gate electrode lying outside of the source region. In practice, one or more bonding pads are deposited in the general vicinity of the gate electrode and outside of the source region. This allows the number of supply points P to be increased without lengthening the source region and thus expanding the chip. With regard to the drain-gate capacitance, the bonding pad or pads can be surrounded by an electrode other than the drain region electrode or the gate electrode to ensure that the drain-gate capacitance is not increased.

REFERENCES:
patent: 3725136 (1973-04-01), Morgan
patent: 4549197 (1985-10-01), Brehm et al.
patent: 4602170 (1986-07-01), Bertin
IEEE International Solid-State Circuits Conference, vol. 24, Feb. 1981, pp. 70-71, New York, U.S., H. M. Mqcksey et al., "GaAs power FET for K-Bank Operation".

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