Semi-conductor component with contact hole

Details Semi-conductor component with contact hole Semi-conductor component with contact hole

1985-01-18

1988-11-15

James, Andrew J.

357 234, 357 86, 357 91, H01L 2348

Patent

active

047853441

ABSTRACT:
In power MOSFETs the source zone (5) and the channel zone (4) must be contacted by a common contact (15). If the contact material is aluminum and if the channel zone (4) is n-conductive (p-channel MOSFET), a surface region (8) of the channel zone (4) is additionally n-doped through an opening (6) in the source zone (5) thereabove with a dose of .gtoreq.5.times.10.sup.14 atoms cm.sup.-2. The aluminum contact (15) contacts the channel zone (4) at this region (8) thereby forming a purely ohmic contact to the channel zone.

REFERENCES:
patent: 4035826 (1977-07-01), Morton et al.
patent: 4443931 (1984-04-01), Baliga
patent: 4502069 (1985-02-01), Schuh
patent: 4516143 (1985-05-01), Love

Affiliated with

Also associated with

Rating

Semi-conductor component with contact hole does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semi-conductor component with contact hole, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semi-conductor component with contact hole will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1106404