Semi-conducting ceramic

Compositions – Barrier layer device compositions – Group iii element containing binary compound; e.g. – ga – as

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252 623BT, 252516, 501 92, C04B 3556

Patent

active

050283464

ABSTRACT:
A semi-conducting ceramic is disclosed. The ceramic consists essentially of from 50 percent to 72 percent of silicon carbide particles, from 25 percent to 47 percent of silicon nitride particles and a modified silicon oxynitride glass bonded to the silicon carbide particles and bonding the silicon nitride particles together.
An improvement in a method for producing an article which comprises silicon carbide particles dispersed in a matrix is also disclosed. The method includes the step of firing or sintering the article to convert the matrix to a densified ceramic with the formation of a liquid phase. The improvement involves embedding the article, prior to firing, in a cover material which contains powdered silicon and maintaining a nitrogen or an inert atmosphere in contact with the cover material during firing. The amount of silicon in the cover material and the composition of the atmosphere are such that the silicon carbide particles are protected against oxidation.

REFERENCES:
patent: 2636826 (1953-04-01), Nicholson
patent: 2752258 (1956-06-01), Swentzel
patent: 3052814 (1962-09-01), Edwards et al.
patent: 3305372 (1967-02-01), Taylor
patent: 4184882 (1980-01-01), Lange
patent: 4332909 (1982-06-01), Nishida et al.
patent: 4743571 (1988-05-01), Steinmann
patent: 4795724 (1989-01-01), Soma et al.
patent: 4814301 (1989-03-01), Steinmann

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