Self turnoff type semiconductor switching device

Details Self turnoff type semiconductor switching device Self turnoff type semiconductor switching device

1985-02-28

1987-01-06

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 234, 357 15, 357 43, 357 86, 307252A, H01L 2974

Patent

active

046350861

ABSTRACT:
A semiconductor switching device includes first to fourth layers, a first gate portion, a second gate portion and a common gate terminal interconnecting the first and second gate portions. The first gate portion is the current control type and has a rectifying PN junction, and the second gate portion is the voltage control type. When a first polarity vias voltage is applied to the common gate terminal, the device turns on through the second gate portion, while turns off through the first gate portion when a second polarity vias voltage is applied to the terminal.

REFERENCES:
patent: 3489962 (1970-01-01), McIntyre et al.
patent: 3831187 (1974-08-01), Neilson
patent: 4054893 (1977-10-01), Hutson
patent: 4509068 (1985-04-01), Stoisiek

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