Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1992-08-07
1994-07-12
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257138, 257137, 257401, H01L 2136, H01L 2174
Patent
active
053291425
ABSTRACT:
A self turn-off power semiconductor device includes a P type emitter layer, a high resistive N type base layer, a P type base layer and a MOS channel structure for injecting electrons into the N type base layer. A series of trench-like grooves are formed in the top surface of a substrate constituting the N type base layer at a constant interval. Insulated gate electrodes are buried in these grooves. The injection efficiency of electrons into the base layer is enhanced by locally controlling the flow of holes in the N type base layer. Controlling the flow of holes is achieved by specifically arranging the width of a hole-bypass path among the grooves, the trench width and the placement distance of the grooves, thereby causing the accumulation of carriers to increase in the base layer to decrease the on-resistance of the device.
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Patent Abstracts of Japan, vol. 13, No. 18, (E-704)(3366), Jan. 17, 1989, & JP-A-63-224260, Sep. 19, 1988, H. Ito, et al., "Conductivity Modulation Type Mosfet".
Japanese Journal of Applied Physics; Supplements, (18th International Conference on Solid State Devices and Materials), Aug. 1986, pp. 97-100, D. Ueda, et al., "A New Injection Suppression Structure for Conductivity Modulated Power Mosfets".
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IEEE, vol. 36, No. 9, Sep. 1989, H. R. Chang, pp. 1824-1829. "500-V n-Channel Insulated-Gate Bipolar Transistor with a Trench Gate Structure."
Kitagawa Mitsuhiko
Omura Ichiro
Abraham Fetsum
Kabushiki Kaisha Toshiba
Sikes William L.
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