Self-sustained pulsation semiconductor laser

Details Self-sustained pulsation semiconductor laser Self-sustained pulsation semiconductor laser

1998-05-21

2000-12-12

Font, Frank G.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 45, 372 46, 372 50, H01S 500

Patent

active

061608297

ABSTRACT:
A self-sustained pulsation semiconductor laser device has a cladding layer including a pair of cladding layer portions, and a saturable absorbing layer and a buffer layer sandwiched between the pair of cladding layer portions. The semiconductor material for the buffer layer has an intermediate valence band energy between valence band energies of the saturable absorbing layer and the semiconductor material for the cladding layer portion in contact with the buffer layer, to reduce spikes formed in the valence band energy profile. Holes are smoothly injected to an active layer which lases in self-sustained pulsation at a high yield.

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