Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Patent
1999-06-17
2000-12-19
Bowers, Charles
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
438774, 257619, 257678, H01L 2146
Patent
active
06162702&
ABSTRACT:
A silicon wafer 2 has an ultra thin central portion 2 that is supported by a circumferential rim 3 of thicker silicon. The central region is thinned by conventional means using conventional removal apparatus. As an alternative method, the central portion is removed using a photoresist mask or a combination of a photoresist mask and a hard mask.
REFERENCES:
patent: 5096854 (1992-03-01), Saito et al.
patent: 5213657 (1993-05-01), Abe et al.
patent: 5840614 (1998-11-01), Sim et al.
patent: 5891298 (1999-04-01), Kuroda et al.
patent: 5968849 (1999-10-01), Bello et al.
patent: 5981391 (1999-11-01), Yamada
patent: 6017822 (2000-01-01), Mountain
patent: 6020252 (2000-01-01), Aspar et al.
patent: 6033995 (2000-03-01), Muller
patent: 6046117 (2000-04-01), Bauer et al.
patent: 6100166 (2000-08-01), Sakaguchi et al.
Ahrens Stephen C.
Ford Raymond T.
Lauffer Jeffrey E.
Morcom William R.
Spindler Jeffrey P.
Blum David S.
Bowers Charles
Intersil Corporation
LandOfFree
Self-supported ultra thin silicon wafer process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Self-supported ultra thin silicon wafer process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-supported ultra thin silicon wafer process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-270741