Self-supported ultra thin silicon wafer process

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate

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438774, 257619, 257678, H01L 2146

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active

06162702&

ABSTRACT:
A silicon wafer 2 has an ultra thin central portion 2 that is supported by a circumferential rim 3 of thicker silicon. The central region is thinned by conventional means using conventional removal apparatus. As an alternative method, the central portion is removed using a photoresist mask or a combination of a photoresist mask and a hard mask.

REFERENCES:
patent: 5096854 (1992-03-01), Saito et al.
patent: 5213657 (1993-05-01), Abe et al.
patent: 5840614 (1998-11-01), Sim et al.
patent: 5891298 (1999-04-01), Kuroda et al.
patent: 5968849 (1999-10-01), Bello et al.
patent: 5981391 (1999-11-01), Yamada
patent: 6017822 (2000-01-01), Mountain
patent: 6020252 (2000-01-01), Aspar et al.
patent: 6033995 (2000-03-01), Muller
patent: 6046117 (2000-04-01), Bauer et al.
patent: 6100166 (2000-08-01), Sakaguchi et al.

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