Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2007-08-21
2007-08-21
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S094000, C257S098000, C257S099000, C257S103000
Reexamination Certificate
active
10498669
ABSTRACT:
Provided is a self-scanning light-emitting element array chip structured on a substrate using Si. A lattice mismatching buffer layer (32) is formed on a Si substrate (30). On the lattice mismatching buffer layer (32), successively stacked are an n-type AlGaAs layer (14), a p-type AlGaAs layer (16), an n-type AlGaAs layer (18), and a p-type AlGaAs layer (20) in this order. On the AlGaAs layer (20) provided is an anode electrode (22), on the AlGaAs layer (18) a gate electrode (24), on the bottom surface of the GaAs substrate a cathode electrode (26).
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Fuji 'Xerox Co., Ltd.
Louie Wai-Sing
RatnerPrestia
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