Self regenerative fast gate turn-off FET

Details Self regenerative fast gate turn-off FET Self regenerative fast gate turn-off FET

1982-06-21

1984-11-06

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307246, 307288, 307572, 307581, H03K 1704, H03K 17087

Patent

active

044814348

ABSTRACT:
A fast turn-off FET circuit is provided by regeneratively coupled bipolar transistors in the gate circuit of the FET which are driven into latched conduction by residual charge in the gate to source capacitance of the FET upon turn-off of the latter due to removal of gate drive. The regeneratively coupled bipolar transistors remain in latched conduction until the FET gate charge is depleted. Conduction of the bipolar transistors provides faster discharge therethrough of the FET gate, whereby to facilitate faster FET turn-off without reverse gating current and its attendant auxiliary power supply.

REFERENCES:
patent: 4178521 (1979-12-01), Speth
patent: 4266149 (1981-05-01), Yoshida

Affiliated with

Also associated with

Rating

Self regenerative fast gate turn-off FET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self regenerative fast gate turn-off FET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self regenerative fast gate turn-off FET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1043981