Communications: electrical – Digital comparator systems
Patent
1975-12-18
1977-06-14
Fears, Terrell W.
Communications: electrical
Digital comparator systems
340173CA, G11C 1100
Patent
active
040300838
ABSTRACT:
This invention involves a memory cell of, for example, the metal-oxide-semiconductor (MOS) capacitor type, which is accessed for reading and writing by means of an access network connected to the memory cell through a gating transistor, and which is provided with an independent refresh network for maintaining the memory state of the cell in the absence of an access writing signal. The refresh network includes a pair of IGFET (Insulated Gate Field-Effect Transistors) transistors connected between the MOS capacitor and an AC refresh line which is completely independent of the electrical access network. Either a "full" or "empty" capacitor memory state, binary digital 1 or 0, respectively, is maintained without the need for interrupting the reading and writing of the MOS capacitor through the gating transistor.
REFERENCES:
patent: 3582909 (1971-01-01), Booker
patent: 3699544 (1972-10-01), Joynson
patent: 3753248 (1973-08-01), Lynes
patent: 3795898 (1974-03-01), Metha
patent: 3851316 (1974-11-01), Kodama
patent: 3858184 (1974-12-01), DeVries
patent: 3858185 (1974-12-01), Reed
patent: 3876993 (1975-04-01), Gavanaugh
patent: 3878404 (1975-04-01), Walther
patent: 3955181 (1976-05-01), Raymond
patent: 3968480 (1976-07-01), Stein
H. K. Burke et al., 1972, IEEE International Solid State Circuits Conference, pp. 16-17, 2-16-1972.
R. E. Joynson et al., IEEE International Solid-State Circuits Conference, vol. SC-7, No. 3, pp. 217-224, June 1972.
T. R. Walther et al., 1972, IEEE International Solid State Circuits Conference, pp. 14-15, Feb. 16, 1972.
M. Eble et al., 1957, IEEE International Solid-State Circuits Conference, pp. 104-105, Feb. 13, 1975.
Bell Telephone Laboratories Incorporated
Caplan D.
Fears Terrell W.
LandOfFree
Self-refreshed capacitor memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Self-refreshed capacitor memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-refreshed capacitor memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-13581