Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1979-03-28
1981-05-19
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330296, 330310, H03F 3193, H03F 324
Patent
active
042687977
ABSTRACT:
A pulsed microwave power amplifier for radar transmitters having a class B operated first stage field effect amplifying transistor, which is gate biased to pinch-off in the absence of an input pulse is disclosed. The drain current pulse induced in response to the input RF signal appears as a voltage, which is stepped up through a Ruthroff transformer to turn on a bipolar transistor which switches a gate of a second stage field effect transistor from pinch-off voltage to a voltage corresponding to the drain current substantially equalling 1/2 I.sub.DSS to operate class A for the second stage of amplification. A third stage of amplification may be utilized, wherein its field effect transistor, which is also biased to pinch-off is operated in response to the amplified signal.
REFERENCES:
patent: 3093740 (1963-06-01), Bush
patent: 3320365 (1967-05-01), Auernheimer
patent: 3528023 (1970-09-01), Jeffers
patent: 4008442 (1977-02-01), Todokoro
patent: 4037169 (1977-07-01), Suzuki
patent: 4077013 (1978-02-01), Moree et al.
Buck Daniel C.
Hess Ricky D.
Mullins James B.
Patterson H.W.
Westinghouse Electric Corp.
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