Self-pulsation type semiconductor laser device

Coherent light generators – Particular active media – Semiconductor

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372 45, H01S 319

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active

060027010

ABSTRACT:
A self-pulsation type semiconductor laser device includes a semiconductor substrate of a first conductive type and a multilayered structure including at least an active layer provided on the semi conductor substrate. The multilayered structure includes a first cladding layer of the first conductive type provided below the active layer, a second cladding layer of a second conductive type having a striped ridge portion provided above the active layer and a saturable absorbing film provided over the second cladding layer. The saturable absorbing film includes an accumulation region for accumulating photoexcited carriers. The accumulating region is provided apart from a surface of the second cladding layer.

REFERENCES:
patent: 5253264 (1993-10-01), Suzuki et al.
patent: 5416790 (1995-05-01), Yodoshi et al.
Adacjo et a; "Self-Sustained Pulsation in 650-NM-Band Algainp Visible-Laser Diodes with Highly Doped Saturable Absorbing Layer", IEEE Photonics Technology Letters, vol. 7, No. 12, Dec. 1, 1995, pp. 1406-1408, XP000547466.
Hoskens et al, "Self-Pulsating Lasers with Quantum Well Saturable Absorber", Applied Physics Letters, vol. 67, No. 10, Sep. 4, 1995, New York, US, pp. 1343-1345, XPOOO2029260.

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