Self-pulsation nitride semiconductor laser device and method...

Details Self-pulsation nitride semiconductor laser device and method... Self-pulsation nitride semiconductor laser device and method...

2006-12-13

2009-11-03

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010

Reexamination Certificate

active

07613218

ABSTRACT:
In a buried type structure including an active layer sandwiched between an n-type cladding layer and a p-type cladding layer and a current blocking layer having an opening for confining a current flowing to the active layer, a regrown layer made of a nitride semiconductor doped with a p-type impurity is formed on the current blocking layer so as to cover the opening of the current blocking layer, and a portion of the regrown layer buried in the opening disposed to be adjacent to a side face of the opening and having a given width W is changed to have the n-type conductivity. Accordingly, the opening of the current blocking layer is effectively narrowed, so as to realize a self-pulsation nitride semiconductor laser device.

REFERENCES:
patent: 6522676 (2003-02-01), Goto et al.
patent: 2003/0201441 (2003-10-01), Nakamura et al.
patent: 10-93199 (1998-04-01), None
patent: 2003-078215 (2003-03-01), None

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